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NCP1380BDR2G
The pictures are for reference only.
  • NCP1380BDR2G

SI7129DN-T1-GE3

Description
Frequency : Angstrohm / Vishay
Square :PowerPAK1212-8
Sealed :Transistor-fet-mosfet-With box
Spot Stocks
Inventory:6000
MOQ:3000
Configuration :22+
Standard packaging :3000
Unit price (including 13% tax)
Purchase quantity
The purchase quantity must not exceed the inventory quantity
The purchase quantity must not be less than the minimum order quantity
Unit-Price
$0.00
Total
0
Detailed Parameters

operaTingTemperaTureproductStatuSOn salefeTTypeP DiscontinuedvoltageCoupledtoinputCapaCitanCeCissmaxvdsSurface mount typeminRdson11.4 mΩ @ 14.4A,10VvgsMax3.8W(Ta),52.1W(Tc)paCkageCasepackageStatic(TR),Shear band(CT)vgs71 nC @ 10 VpowerDissipationmaxPowerPAK® 1212-8technologyMOSFET(Metal-oxide-semiconductor)driVeVoltagemaxrdson4.5V,10VdrainTosourcevolTagevdss30 VseriesTrenchFET®vgsthMaxid±20Vqty0.0CurrentContinuousdrainid25°C35A(Tc)inputCapaCitanCeCissmaxvds-50°C ~ 150°C(TJ)rdsOnmaxid2.8V @ 250µAFetFeaturePowerPAK® 1212-8supplierDevicepackagegateChargeqgmaxvgs3345 pF @ 15 VvoltageCoupledtogateChargeqgmaxvgsmounTingTypeminQty1.0

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