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NCP1380BDR2G
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  • NCP1380BDR2G

SI2319CDS-T1-GE3

Description
Frequency : Angstrohm / Vishay
Square :SOT23
Sealed :Transistor-fet-mosfet-With box
Spot Stocks
Inventory:6000
MOQ:3000
Configuration :22+
Standard packaging :3000
Unit price (including 13% tax)
Purchase quantity
The purchase quantity must not exceed the inventory quantity
The purchase quantity must not be less than the minimum order quantity
Unit-Price
$0.00
Total
0
Detailed Parameters

operaTingTemperaTureproductStatuSOn salefeTTypeP DiscontinuedvoltageCoupledtoinputCapaCitanCeCissmaxvdsSurface mount typeminRdson77 mΩ @ 3.1A,10VvgsMax1.25W(Ta),2.5W(Tc)paCkageCasepackageStatic(TR),Shear band(CT)vgs21 nC @ 10 VpowerDissipationmaxTO-236-3,SC-59,SOT-23-3technologyMOSFET(Metal-oxide-semiconductor)driVeVoltagemaxrdson4.5V,10VdrainTosourcevolTagevdss40 VseriesTrenchFET®vgsthMaxid±20Vqty0.0CurrentContinuousdrainid25°C4.4A(Tc)inputCapaCitanCeCissmaxvds-55°C ~ 150°C(TJ)rdsOnmaxid2.5V @ 250µAFetFeatureSOT-23-3(TO-236)supplierDevicepackagegateChargeqgmaxvgs595 pF @ 20 VvoltageCoupledtogateChargeqgmaxvgsmounTingTypeminQty1.0

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