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NCP1380BDR2G
The pictures are for reference only.
  • NCP1380BDR2G

PMXB360ENEAZ

Description
Frequency : Nexperia
Square :SOT1215
Sealed :Transistor-fet-mosfet-With box
Spot Stocks
Inventory:250000
MOQ:5000
Configuration :18+
Standard packaging :5000
Unit price (including 13% tax)
Purchase quantity
The purchase quantity must not exceed the inventory quantity
The purchase quantity must not be less than the minimum order quantity
Unit-Price
$0.05
Total
247
Detailed Parameters

operaTingTemperaTureproductStatuSOn salefeTTypeN DiscontinuedvoltageCoupledtoinputCapaCitanCeCissmaxvdsSurface mount typeminRdson450 mΩ @ 1.1A,10VvgsMax400mW(Ta),6.25W(Tc)paCkageCasepackageStatic(TR),Shear band(CT)vgs4.5 nC @ 10 VpowerDissipationmax3-XDFN Bare solder padtechnologyMOSFET(Metal-oxide-semiconductor)driVeVoltagemaxrdson4.5V,10VdrainTosourcevolTagevdss80 VseriesvgsthMaxid±20Vqty0.0CurrentContinuousdrainid25°C1.1A(Ta)inputCapaCitanCeCissmaxvds-55°C ~ 150°C(TJ)rdsOnmaxid2.7V @ 250µAFetFeatureDFN1010D-3supplierDevicepackagegateChargeqgmaxvgs130 pF @ 40 VvoltageCoupledtogateChargeqgmaxvgsmounTingTypeminQty1.0

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