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NCP1380BDR2G
The pictures are for reference only.
  • NCP1380BDR2G

NTMFS4C302NT1G

Description
Frequency : ON
Square :SO-8FL
Sealed :Transistor-fet-mosfet-With box
Spot Stocks
Inventory:6000
MOQ:1500
Configuration :22+
Standard packaging :1500
Unit price (including 13% tax)
Purchase quantity
The purchase quantity must not exceed the inventory quantity
The purchase quantity must not be less than the minimum order quantity
Unit-Price
$0.00
Total
0
Detailed Parameters

operaTingTemperaTureproductStatuSOn salefeTTypeN DiscontinuedvoltageCoupledtoinputCapaCitanCeCissmaxvdsSurface mount typeminRdson1.15 mΩ @ 30A,10VvgsMax3.13W(Ta),96W(Tc)paCkageCasepackageStatic(TR),Shear band(CT)vgs82 nC @ 10 VpowerDissipationmax8-PowerTDFN,5 LeadtechnologyMOSFET(Metal-oxide-semiconductor)driVeVoltagemaxrdson4.5V,10VdrainTosourcevolTagevdss30 VseriesvgsthMaxid±20Vqty0.0CurrentContinuousdrainid25°C41A(Ta),230A(Tc)inputCapaCitanCeCissmaxvds-55°C ~ 150°C(TJ)rdsOnmaxid2.2V @ 250µAFetFeature5-DFN(5×6)(8-SOFL)supplierDevicepackagegateChargeqgmaxvgs5780 pF @ 15 VvoltageCoupledtogateChargeqgmaxvgsmounTingTypeminQty1.0

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