operaTingTemperaTure–productStatuSOn salefeTTypeN DiscontinuedvoltageCoupledtoinputCapaCitanCeCissmaxvdsThrough-holeminRdson8 mΩ @ 62A,10VvgsMax200W(Tc)paCkageCase–packageSolid statevgs146 nC @ 10 VpowerDissipationmaxTO-220-3technologyMOSFET(Metal-oxide-semiconductor)driVeVoltagemaxrdson10VdrainTosourcevolTagevdss55 VseriesHEXFET®vgsthMaxid±20Vqty0.0CurrentContinuousdrainid25°C110A(Tc)inputCapaCitanCeCissmaxvds-55°C ~ 175°C(TJ)rdsOnmaxid4V @ 250µAFetFeatureTO-220ABsupplierDevicepackage–gateChargeqgmaxvgs3247 pF @ 25 VvoltageCoupledtogateChargeqgmaxvgs–mounTingType–minQty1.0