operaTingTemperaTure–productStatuSTripfeTTypeN DiscontinuedvoltageCoupledtoinputCapaCitanCeCissmaxvdsSurface mount typeminRdson9 Ω @ 800mA，10VvgsMax2.5W（Ta），50W（Tc）paCkageCase–packageStatic（TR）,Shear band（CT）vgs15.5 nC @ 10 VpowerDissipationmaxTO-252-3，DPak（2 Lead + 接片），SC-63technologyMOSFET（Metal-oxide-semiconductor）driVeVoltagemaxrdson10VdrainTosourcevolTagevdss1000 VseriesQFET®vgsthMaxid±30Vqty0.0CurrentContinuousdrainid25°C1.6A（Tc）inputCapaCitanCeCissmaxvds-55°C ~ 150°C（TJ）rdsOnmaxid5V @ 250µAFetFeatureTO-252AAsupplierDevicepackage–gateChargeqgmaxvgs520 pF @ 25 VvoltageCoupledtogateChargeqgmaxvgs–mounTingType–minQty1.0