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NCP1380BDR2G
The pictures are for reference only.
  • NCP1380BDR2G

FDN337N

Description
Frequency : onsemi
Square :SOT23
Sealed :Transistor-fet-mosfet-With box
Spot Stocks
Inventory:9000
MOQ:3000
Configuration :22+
Standard packaging :3000
Unit price (including 13% tax)
Purchase quantity
The purchase quantity must not exceed the inventory quantity
The purchase quantity must not be less than the minimum order quantity
Unit-Price
$0.00
Total
0
Detailed Parameters

operaTingTemperaTureproductStatuSOn salefeTTypeN DiscontinuedvoltageCoupledtoinputCapaCitanCeCissmaxvdsSurface mount typeminRdson65 mΩ @ 2.2A,4.5VvgsMax500mW(Ta)paCkageCasepackageStatic(TR),Shear band(CT)vgs9 nC @ 4.5 VpowerDissipationmaxTO-236-3,SC-59,SOT-23-3technologyMOSFET(Metal-oxide-semiconductor)driVeVoltagemaxrdson2.5V,4.5VdrainTosourcevolTagevdss30 VseriesvgsthMaxid±8Vqty0.0CurrentContinuousdrainid25°C2.2A(Ta)inputCapaCitanCeCissmaxvds-55°C ~ 150°C(TJ)rdsOnmaxid1V @ 250µAFetFeatureSOT-23-3supplierDevicepackagegateChargeqgmaxvgs300 pF @ 10 VvoltageCoupledtogateChargeqgmaxvgsmounTingTypeminQty1.0

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