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NCP1380BDR2G
The pictures are for reference only.
  • NCP1380BDR2G

FDMS86163P

Description
Frequency : ON
Square :PQFN-8
Sealed :Transistor-fet-mosfet-With box
Spot Stocks
Inventory:6000
MOQ:3000
Configuration :22+
Standard packaging :3000
Unit price (including 13% tax)
Purchase quantity
The purchase quantity must not exceed the inventory quantity
The purchase quantity must not be less than the minimum order quantity
Unit-Price
$0.00
Total
0
Detailed Parameters

operaTingTemperaTureproductStatuSOn salefeTTypeP DiscontinuedvoltageCoupledtoinputCapaCitanCeCissmaxvdsSurface mount typeminRdson22 mΩ @ 7.9A,10VvgsMax2.5W(Ta),104W(Tc)paCkageCasepackageStatic(TR),Shear band(CT)vgs59 nC @ 10 VpowerDissipationmax8-PowerTDFNtechnologyMOSFET(Metal-oxide-semiconductor)driVeVoltagemaxrdson6V,10VdrainTosourcevolTagevdss100 VseriesPowerTrench®vgsthMaxid±25Vqty0.0CurrentContinuousdrainid25°C7.9A(Ta),50A(Tc)inputCapaCitanCeCissmaxvds-55°C ~ 150°C(TJ)rdsOnmaxid4V @ 250µAFetFeature8-PQFN(5×6)supplierDevicepackagegateChargeqgmaxvgs4085 pF @ 50 VvoltageCoupledtogateChargeqgmaxvgsmounTingTypeminQty1.0

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