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NCP1380BDR2G
The pictures are for reference only.
  • NCP1380BDR2G

FDMS6681Z

Description
Frequency : onsemi
Square :DFN-8
Sealed :Transistor-fet-mosfet-With box
Spot Stocks
Inventory:6000
MOQ:3000
Configuration :22+
Standard packaging :3000
Unit price (including 13% tax)
Purchase quantity
The purchase quantity must not exceed the inventory quantity
The purchase quantity must not be less than the minimum order quantity
Unit-Price
$0.00
Total
0
Detailed Parameters

operaTingTemperaTureproductStatuSTripfeTTypeP DiscontinuedvoltageCoupledtoinputCapaCitanCeCissmaxvdsSurface mount typeminRdson3.2 mΩ @ 22.1A,10VvgsMax2.5W(Ta),73W(Tc)paCkageCasepackageStatic(TR),Shear band(CT)vgs241 nC @ 10 VpowerDissipationmax8-PowerTDFNtechnologyMOSFET(Metal-oxide-semiconductor)driVeVoltagemaxrdson4.5V,10VdrainTosourcevolTagevdss30 VseriesPowerTrench®vgsthMaxid±25Vqty0.0CurrentContinuousdrainid25°C21.1A(Ta),49A(Tc)inputCapaCitanCeCissmaxvds-55°C ~ 150°C(TJ)rdsOnmaxid3V @ 250µAFetFeature8-PQFN(5×6)supplierDevicepackagegateChargeqgmaxvgs10380 pF @ 15 VvoltageCoupledtogateChargeqgmaxvgsmounTingTypeminQty1.0

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