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NCP1380BDR2G
The pictures are for reference only.
  • NCP1380BDR2G

FDMC5614P

Description
Frequency : onsemi
Square :Power-33-8
Sealed :Transistor-fet-mosfet-With box
Spot Stocks
Inventory:9000
MOQ:3000
Configuration :22+
Standard packaging :3000
Unit price (including 13% tax)
Purchase quantity
The purchase quantity must not exceed the inventory quantity
The purchase quantity must not be less than the minimum order quantity
Unit-Price
$0.00
Total
0
Detailed Parameters

operaTingTemperaTureproductStatuSTripfeTTypeP DiscontinuedvoltageCoupledtoinputCapaCitanCeCissmaxvdsSurface mount typeminRdson100 mΩ @ 5.7A,10VvgsMax2.1W(Ta),42W(Tc)paCkageCasepackageStatic(TR),Shear band(CT)vgs20 nC @ 10 VpowerDissipationmax8-PowerWDFNtechnologyMOSFET(Metal-oxide-semiconductor)driVeVoltagemaxrdson4.5V,10VdrainTosourcevolTagevdss60 VseriesPowerTrench®vgsthMaxid±20Vqty0.0CurrentContinuousdrainid25°C5.7A(Ta),13.5A(Tc)inputCapaCitanCeCissmaxvds-55°C ~ 150°C(TJ)rdsOnmaxid3V @ 250µAFetFeature8-MLP(3.3×3.3)supplierDevicepackagegateChargeqgmaxvgs1055 pF @ 30 VvoltageCoupledtogateChargeqgmaxvgsmounTingTypeminQty1.0

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