Wonderful Technology (HK) Electronics Limited
Product Catalog
The pictures are for reference only.
FDB120N10
Description
Frequency : ON
Square :TO-263
Sealed :Transistor-fet-mosfet-With box
Square :TO-263
Sealed :Transistor-fet-mosfet-With box
Spot Stocks
Inventory:1600
MOQ:800
Configuration :22+
Standard packaging :800
MOQ:800
Configuration :22+
Standard packaging :800
Unit price (including 13% tax)
Detailed Parameters
operaTingTemperaTure–productStatuSOn salefeTTypeN DiscontinuedvoltageCoupledtoinputCapaCitanCeCissmaxvdsSurface mount typeminRdson12 mΩ @ 74A，10VvgsMax170W（Tc）paCkageCase–packageStatic（TR）,Shear band（CT）vgs86 nC @ 10 VpowerDissipationmaxTO-263-3，D²Pak（2 Lead + 接片），TO-263ABtechnologyMOSFET（Metal-oxide-semiconductor）driVeVoltagemaxrdson10VdrainTosourcevolTagevdss100 VseriesPowerTrench®vgsthMaxid±20Vqty0.0CurrentContinuousdrainid25°C74A（Tc）inputCapaCitanCeCissmaxvds-55°C ~ 175°C（TJ）rdsOnmaxid4.5V @ 250µAFetFeatureD²PAK（TO-263）supplierDevicepackage–gateChargeqgmaxvgs5605 pF @ 25 VvoltageCoupledtogateChargeqgmaxvgs–mounTingType–minQty1.0
