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NCP1380BDR2G
The pictures are for reference only.
  • NCP1380BDR2G

DMN3032LE-13

Description
Frequency : DIODES
Square :SOT223
Sealed :Transistor-fet-mosfet-With box
Spot Stocks
Inventory:35000
MOQ:2500
Configuration :22+
Standard packaging :2500
Unit price (including 13% tax)
Purchase quantity
The purchase quantity must not exceed the inventory quantity
The purchase quantity must not be less than the minimum order quantity
Unit-Price
$0.07
Total
¥
176.25
Detailed Parameters

operaTingTemperaTure–productStatuSOn salefeTTypeN DiscontinuedvoltageCoupledtoinputCapaCitanCeCissmaxvdsSurface mount typeminRdson29 mΩ @ 3.2A,10VvgsMax1.8W(Ta)paCkageCase–packageStatic(TR),Shear band(CT)vgs11.3 nC @ 10 VpowerDissipationmaxTO-261-4,TO-261AAtechnologyMOSFET(Metal-oxide-semiconductor)driVeVoltagemaxrdson4.5V,10VdrainTosourcevolTagevdss30 Vseries–vgsthMaxid±20Vqty0.0CurrentContinuousdrainid25°C5.6A(Ta)inputCapaCitanCeCissmaxvds-55°C ~ 150°C(TJ)rdsOnmaxid2V @ 250µAFetFeatureSOT-223-3supplierDevicepackage–gateChargeqgmaxvgs498 pF @ 15 VvoltageCoupledtogateChargeqgmaxvgs–mounTingType–minQty1.0

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