Diode configuration1 Common anodeParallel_if_Time voltage_Forward_vf1.25 V @ 200 mAOperating temperature_Structure150°C(Maximum)Reverse recovery time_trr50 nsParallel_vr_Time current_Reverse leakage100 nA @ 200 VVendor device packagingTO-236ABMinimum quantity1.0Telecommunications_dc_Inverted_vr_Maximum value200 VDot matrix_Average rectification_io_Per diode225mA(DC)Mounting typeSurface mount typeSquare_CasingTO-236-3,SC-59,SOT-23-3PackagingStatic(TR),Shear band(CT)Series–DiodeSpanPlateBidirectional快速恢复 = 200mA(Io)qty0.0
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