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NCP1380BDR2G
The pictures are for reference only.
  • NCP1380BDR2G

AONR21357

Description
Frequency : AOS
Square :DFN3X3
Sealed :Transistor-fet-mosfet-With box
Spot Stocks
Inventory:10000
MOQ:5000
Configuration :22+
Standard packaging :5000
Unit price (including 13% tax)
Purchase quantity
The purchase quantity must not exceed the inventory quantity
The purchase quantity must not be less than the minimum order quantity
Unit-Price
$0.15
Total
740.5
Detailed Parameters

operaTingTemperaTureproductStatuSOn salefeTTypeP DiscontinuedvoltageCoupledtoinputCapaCitanCeCissmaxvdsSurface mount typeminRdson7.8 mΩ @ 20A,10VvgsMax5W(Ta),30W(Tc)paCkageCasepackageStatic(TR),Shear band(CT)vgs70 nC @ 10 VpowerDissipationmax8-PowerVDFNtechnologyMOSFET(Metal-oxide-semiconductor)driVeVoltagemaxrdson4.5V,10VdrainTosourcevolTagevdss30 VseriesvgsthMaxid±25Vqty0.0CurrentContinuousdrainid25°C21A(Ta),34A(Tc)inputCapaCitanCeCissmaxvds-55°C ~ 150°C(TJ)rdsOnmaxid2.3V @ 250µAFetFeature8-DFN-EP(3×3)supplierDevicepackagegateChargeqgmaxvgs2830 pF @ 15 VvoltageCoupledtogateChargeqgmaxvgsmounTingTypeminQty1.0

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