operaTingTemperaTure–productStatuSNot applicable for new designsfeTTypeN DiscontinuedvoltageCoupledtoinputCapaCitanCeCissmaxvdsSurface mount typeminRdson20 mΩ @ 8A，10VvgsMax3.1W（Ta），20W（Tc）paCkageCase–packageStatic（TR）,Shear band（CT）vgs12 nC @ 10 VpowerDissipationmax8-PowerVDFNtechnologyMOSFET（Metal-oxide-semiconductor）driVeVoltagemaxrdson4.5V，10VdrainTosourcevolTagevdss30 Vseries–vgsthMaxid±20Vqty0.0CurrentContinuousdrainid25°C9.5A（Ta），24A（Tc）inputCapaCitanCeCissmaxvds-55°C ~ 150°C（TJ）rdsOnmaxid2.5V @ 250µAFetFeature8-DFN-EP（3×3）supplierDevicepackage–gateChargeqgmaxvgs660 pF @ 15 VvoltageCoupledtogateChargeqgmaxvgs–mounTingType–minQty1.0