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NCP1380BDR2G
The pictures are for reference only.
  • NCP1380BDR2G

2N7000

Description
Frequency : ON
Square :TO-92-3
Sealed :Transistor-fet-mosfet-With box
Spot Stocks
Inventory:4000
MOQ:1000
Configuration :22+
Standard packaging :1000
Unit price (including 13% tax)
Purchase quantity
The purchase quantity must not exceed the inventory quantity
The purchase quantity must not be less than the minimum order quantity
Unit-Price
$0.00
Total
¥
0
Detailed Parameters

operaTingTemperaTure–productStatuSOn salefeTTypeN DiscontinuedvoltageCoupledtoinputCapaCitanCeCissmaxvdsThrough-holeminRdson5 Ω @ 500mA,10VvgsMax400mW(Ta)paCkageCase–packageTri-statevgs–powerDissipationmaxTO-226-3,TO-92-3 Standard body(!–TO-226AA)technologyMOSFET(Metal-oxide-semiconductor)driVeVoltagemaxrdson4.5V,10VdrainTosourcevolTagevdss60 Vseries–vgsthMaxid±20Vqty0.0CurrentContinuousdrainid25°C200mA(Ta)inputCapaCitanCeCissmaxvds-55°C ~ 150°C(TJ)rdsOnmaxid3V @ 1mAFetFeatureTO-92-3supplierDevicepackage–gateChargeqgmaxvgs50 pF @ 25 VvoltageCoupledtogateChargeqgmaxvgs–mounTingType–minQty1.0

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