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NCP1380BDR2G
The pictures are for reference only.
  • NCP1380BDR2G

DMN61D9UW-7

Description
Frequency : DIODES
Square :SOT-323
Sealed :Transistor-fet-mosfet-With box
Spot Stocks
Inventory:6000
MOQ:3000
Configuration :22+
Standard packaging :3000
Unit price (including 13% tax)
Purchase quantity
The purchase quantity must not exceed the inventory quantity
The purchase quantity must not be less than the minimum order quantity
Unit-Price
$0.00
Total
¥
0
Detailed Parameters

operaTingTemperaTure–productStatuSTripfeTTypeN DiscontinuedvoltageCoupledtoinputCapaCitanCeCissmaxvdsSurface mount typeminRdson2 Ω @ 50mA,5VvgsMax320mW(Ta)paCkageCase–packageStatic(TR),Shear band(CT)vgs0.4 nC @ 4.5 VpowerDissipationmaxSC-70,SOT-323technologyMOSFET(Metal-oxide-semiconductor)driVeVoltagemaxrdson1.8V,5VdrainTosourcevolTagevdss60 Vseries–vgsthMaxid±20Vqty0.0CurrentContinuousdrainid25°C340mA(Ta)inputCapaCitanCeCissmaxvds-55°C ~ 150°C(TJ)rdsOnmaxid1V @ 250µAFetFeatureSOT-323supplierDevicepackage–gateChargeqgmaxvgs28.5 pF @ 30 VvoltageCoupledtogateChargeqgmaxvgs–mounTingType–minQty0.0

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